Description
STGW40M120DF3 STGWA40M120DF3 Trench gate field-stop IGBT, M series 1200 V, 40 A low loss Datasheet - production data .
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This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
Features
* 72 72ORQJOHDGV
Figure 1.Internal schematic diagram
* 10 µs of short-circuit withstand time
* VCE(sat) = 1.85 V (typ. ) @ IC = 40 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resistance
* Soft and fast recovery an
Applications
* Industrial drives
* UPS
* Solar