STGW80H65DFB-4 IGBT

STMicroelectronics

STGW80H65DFB-4 Description

STGW80H65DFB-4 Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT TO247-4 2 34 1 C(1, TAB) .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGW80H65DFB-4 Features

* VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recover

STGW80H65DFB-4 Applications

* K(3)
* Photovoltaic inverters

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Datasheet Details

Part number: STGW80H65DFB-4
Manufacturer: STMicroelectronics ↗
File Size: 291.44 KB
Datasheet: STGW80H65DFB-4-STMicroelectronics.pdf
Description: IGBT

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