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STGW80V60DF IGBT

STGW80V60DF Description

STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data TAB 3 2 1 TO-247 3 2 1 TO-3.
This device is an IGBT developed using an advanced proprietary trench gate field stop structure.

STGW80V60DF Features

* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ. ) @ IC = 80 A
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance

STGW80V60DF Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

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