STGW80H65DFB IGBT

STMicroelectronics

STGW80H65DFB Description

STGW80H65DFB, STGWT80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT 3 2 1 TO-247 TAB TO-3P 3 2 1 .
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

STGW80H65DFB Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 80 A
* Tight parameter distribution
* Safe paralleling
* Positive VCE(sat) temperature c

STGW80H65DFB Applications

* Photovoltaic inverters

📥 Download Datasheet

STGW80H65DFB Datasheet Preview — Preview of STGW80H65DFB PDF

Datasheet Details

Part number: STGW80H65DFB
Manufacturer: STMicroelectronics ↗
File Size: 663.72 KB
Datasheet: STGW80H65DFB-STMicroelectronics.pdf
Description: IGBT

📁 Related Datasheet

STGW12NB60H - N-CHANNEL IGBT (ST Microelectronics)
STGW12NB60HD - N-CHANNEL IGBT (ST Microelectronics)
STGW20NB60H - N-CHANNEL IGBT (ST Microelectronics)
STGW20NB60HD - N-CHANNEL IGBT (ST Microelectronics)
STGW20NB60K - N-CHANNEL IGBT (ST Microelectronics)
STGW20NB60KD - N-CHANNEL IGBT (ST Microelectronics)
STGW30N90D - IGBT (ST Microelectronics)
STGW30NB60H - N-CHANNEL IGBT (ST Microelectronics)

📌 All Tags

IGBT STMicroelectronics

STMicroelectronics STGW80H65DFB-like datasheet