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STGSH80HB65DAG IGBT

STGSH80HB65DAG Description

7 9 9 7 1 6 7 9 6 1 ACEPACK SMIT 6 9 1 7 1 6 ACEPACK SMIT GADG031120220946SA 9 (DC+) T1 1 (G1) 2 (K1) T2 6 (G2) 5 (K2) D1 7 (U) D2 8 (DC-.
This device combines two IGBTs and diodes in half-bridge topology mounted on a very compact and rugged easily surface-mounted package.

STGSH80HB65DAG Features

* AQG 324 qualified
* High-speed switching series
* Maximum junction temperature: TJ = 175 °C
* Low VCE(sat) = 1.7 V (typ. ) @ IC = 80 A
* Minimized tail current
* Tight parameter distribution
* Low thermal resistance thanks to DBC subst

STGSH80HB65DAG Applications

* DC/DC converter for EV/HEV

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IGBT STMicroelectronics
STMicroelectronics STGSH80HB65DAG-like datasheet