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STGSB200M65DF2AG IGBT

STGSB200M65DF2AG Description

STGSB200M65DF2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 200 A, low-loss M series IGBT in an ACEPACK SMIT package 9 8 7 7 8 9 4 6.
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGSB200M65DF2AG Features

* AEC-Q101 qualified
* 6 μs of minimum short-circuit withstand time
* VCE(sat) = 1.65 V (typ. ) @ IC = 200 A
* Tight parameter distribution
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Maximum junction temperature: TJ =

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IGBT STMicroelectronics
STMicroelectronics STGSB200M65DF2AG-like datasheet