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STGFW30V60DF - IGBT

STGFW30V60DF Description

STGFW30V60DF Datasheet Trench gate field-stop IGBT, V series 600 V, 30 A very high speed TO-3PF 3 2 1 C (2) G (1) Sc12850_no_tab E (3) .
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGFW30V60DF Features

* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ. ) @ IC = 30 A
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance

STGFW30V60DF Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

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IGBT STMicroelectronics
STMicroelectronics STGFW30V60DF-like datasheet