Datasheet4U Logo Datasheet4U.com

STGFW30H65FB - IGBT

STGFW30H65FB Description

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT 3 2 1 TO-247 1 TO-3PF 3 2 1 G(1) C(2, TAB) E(3.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

STGFW30H65FB Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* VCE(sat) = 1.55 V (typ. ) at IC = 30 A
* Tight parameters distribution
* Safe paralleling

STGFW30H65FB Applications

* Photovoltaic inverters
* Power factor correction
* Welding

📥 Download Datasheet

Preview of STGFW30H65FB PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • STGF10HF60KD - Short-circuit Rugged IGBT (ST Microelectronics)
  • STGF10NB60SD - IGBT (ST Microelectronics)
  • STGF10NC60SD - 10A - 600V Fast IGBT (ST Microelectronics)
  • STGF14HF60KD - Short-circuit Rugged IGBT (ST Microelectronics)
  • STGF14N60D - 14 A - 600 V - Short Circuit Rugged IGBT (ST Microelectronics)
  • STGF14NC60KD - 600V short-circuit rugged IGBT (ST Microelectronics)
  • STGF19NC60HD - very fast IGBT (ST Microelectronics)
  • STGF20NB60S - N-CHANNEL IGBT (ST Microelectronics)

📌 All Tags

IGBT STMicroelectronics
STMicroelectronics STGFW30H65FB-like datasheet