STGFW20V60DF Trench gate field-stop IGBT

STMicroelectronics

Description

STGFW20V60DF Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Datasheet - production data TO-3PF 3 2 1 Figure 1: Internal schemat.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: STGFW20V60DF
Manufacturer: STMicroelectronics ↗
File Size: 703.74 KB
Datasheet: STGFW20V60DF-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* Very high speed switching series
* Tail-less switching off
* VCE(sat) = 1.8 V (typ. ) @ IC = 20 A
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

STGFW20V60DF Distributors

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STGFW20V60DF Trench gate field-stop IGBT STMicroelectronics

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