STGB4M65DF2 Datasheet - STMicroelectronics

STGB4M65DF2, IGBT

STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diag.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

STGB4M65DF2-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGB4M65DF2

Manufacturer:

STMicroelectronics ↗

File Size:

971.33 KB

Description:

IGBT

Features

* 6 µs of short-circuit withstand time
* VCE(sat) = 1.6 V (typ. ) @ IC = 4 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resistance

Applications

* Motor control
* UPS

STGB4M65DF2 Distributors

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STGB4M65DF2 IGBT STMicroelectronics

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