STGB40H65FB Datasheet - STMicroelectronics

STGB40H65FB, IGBT

STGB40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

STGB40H65FB-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGB40H65FB

Manufacturer:

STMicroelectronics ↗

File Size:

824.19 KB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A
* Tight parameter distribution
* Safe paralleling

Applications

* Photovoltaic inverters

STGB40H65FB Distributors

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STGB40H65FB IGBT STMicroelectronics

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