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STF9N60M2 - N-CHANNEL POWER MOSFET

STF9N60M2 Description

STF9N60M2, STFI9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production.
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

STF9N60M2 Features

* Order codes STF9N60M2 STFI9N60M2 VDS @ TJmax RDS(on) max ID 650 V 0.78 Ω 5.5 A
* Extremely low gate charge
* Lower RDS(on) x area vs previous generation
* Low gate input resistance
* 100% avalanche tested
* Zener-protected Figure 1. Internal schematic d

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N-CHANNEL POWER MOSFET STMicroelectronics
STMicroelectronics STF9N60M2-like datasheet