SCTW60N120G2AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCTW60N120G2AG Description

SCTW60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package .
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.

SCTW60N120G2AG Features

* Order code SCTW60N120G2AG VDS 1200 V RDS(on) typ. 45 mΩ ID 52 A HiP247 D(2, TAB) G(1) S(3) 3 2 1
* AEC-Q101 qualified
* High speed switching performance
* Very fast and robust intrinsic body diode
* Low capacitances
* Very high operating junction tempera

SCTW60N120G2AG Applications

* DC-DC converters
* Solar Inverters and renewable energy
* SMPS

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Datasheet Details

Part number: SCTW60N120G2AG
Manufacturer: STMicroelectronics ↗
File Size: 192.35 KB
Datasheet: SCTW60N120G2AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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