SCTW35N65G2V Silicon carbide Power MOSFET

STMicroelectronics

SCTW35N65G2V Description

SCTW35N65G2V Datasheet Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package HiP247 3 2 1 D(2, TAB) G(1) S(3) AM01475v1_noZe.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW35N65G2V Features

* Order code VDS RDS(on) max. ID SCTW35N65G2V 650 V 67 mΩ 45 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

SCTW35N65G2V Applications

* Switching mode power supply
* DC-DC converters

📥 Download Datasheet

SCTW35N65G2V Datasheet Preview — Preview of SCTW35N65G2V PDF

Datasheet Details

Part number: SCTW35N65G2V
Manufacturer: STMicroelectronics ↗
File Size: 200.35 KB
Datasheet: SCTW35N65G2V-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

📁 Related Datasheet

SCT-013-000 - Transformer (XiDi Technology)
SCT-013-000V - Split core current transformer (YHDC)
SCT-013-005 - Transformer (YHDC)
SCT-013-010 - Transformer (YHDC)
SCT-013-015 - Transformer (YHDC)
SCT-013-020 - Transformer (YHDC)
SCT-013-025 - Split core current transformer (YHDC)
SCT-013-030 - Transformer (XiDi Technology)

📌 All Tags

Silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTW35N65G2V-like datasheet

SCTW35N65G2VAG - Automotive-grade silicon carbide Power MOSFET
SCTW100N120G2AG - Automotive-grade silicon carbide Power MOSFET
SCTW100N65G2AG - silicon carbide Power MOSFET
SCTW40N120G2V - Silicon carbide Power MOSFET
SCTW40N120G2VAG - Automotive-grade silicon carbide Power MOSFET
SCTW60N120G2 - Silicon carbide Power MOSFET