SCTW60N120G2 Silicon carbide Power MOSFET

STMicroelectronics

SCTW60N120G2 Description

SCTW60N120G2 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247 package HiP247 3 2 1 D(2, TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTW60N120G2 Features

* Order code VDS RDS(on) max. ID SCTW60N120G2 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

SCTW60N120G2 Applications

* Switching mode power supply
* DC-DC converters

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Datasheet Details

Part number: SCTW60N120G2
Manufacturer: STMicroelectronics ↗
File Size: 196.37 KB
Datasheet: SCTW60N120G2-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

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Silicon carbide Power MOSFET STMicroelectronics

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