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SCT027TO65G3 650V 60A Silicon carbide Power MOSFET

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Description

SCT027TO65G3 Datasheet Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package Gate (1) Driver source (2) .
Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative.

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Features

* TO-LL Order code VDS SCT027TO65G3 650 V
* Very fast and robust intrinsic body diode
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Source sensing pin for increased efficiency RDS(on) typ. 29 mΩ ID 60 A Drain (TAB)

Applications

* AC-DC converters

SCT027TO65G3 Distributors

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