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SCT025H120G3AG Automotive-grade silicon carbide Power MOSFET

SCT025H120G3AG Description

SCT025H120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 55 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Fe.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT025H120G3AG Features

* Order code SCT025H120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 55 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased eff

SCT025H120G3AG Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics
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