SCT020HU120G3AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCT020HU120G3AG Description

SCT020HU120G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package TAB Gate (1) Driver source (.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT020HU120G3AG Features

* Order code SCT020HU120G3AG VDS 1200 V RDS(on) typ. 18.5 mΩ ID 100 A
* AEC-Q101 qualified
* Very low RDS(on) over the entire temperature range
* High speed switching performances
* Very fast and robust intrinsic body diode
* Source sensing pin for increased

SCT020HU120G3AG Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

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Datasheet Details

Part number: SCT020HU120G3AG
Manufacturer: STMicroelectronics ↗
File Size: 593.81 KB
Datasheet: SCT020HU120G3AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

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Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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