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RF5L08600CB4 RF power LDMOS transistor

RF5L08600CB4 Description

RF5L08600CB4 Datasheet 650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain B .
The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS FET, designed for multiple applications in the frequency range from 0.

RF5L08600CB4 Features

* Order code Frequency VDD POUT Gain Efficiency RF5L08600CB4 650 MHz 50 V 650 W 19.5 dB 67%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched pair transistors in push-pull configuration
* Large positive and negativ

RF5L08600CB4 Applications

* Wideband lab amplifier from 0.4 to 1 GHz
* Digital UHF TV 470-860 MHz
* 650 MHz particle accelerator

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power LDMOS transistor STMicroelectronics
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