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RF5L051K0CB4 RF power LDMOS transistor

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Description

RF5L051K0CB4 Datasheet 1000 W, 50 V, HF to 500 MHz RF power LDMOS transistor 1 2 5 4 3 D4E Pin connection Pin Connection 1 Drain A 2 Drain .
The RF5L051K0CB4 is a 1000 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequen.

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Features

* Order code Frequency VDD POUT Gain Efficiency RF5L051K0CB4 108 MHz 50 V 1000 W 21 dB 77%
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* On ch

Applications

* 30-88 MHz/136-174 MHz ground communication
* 1.6-30 MHz HF transceiver
* Plasma generator
* Particle accelerator

RF5L051K0CB4 Distributors

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