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RF5L08350CB4 RF Power LDMOS transistor

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Description

RF5L08350CB4 Datasheet 400 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor 1 2 5 4 3 B4E Pin connection Pin Connection 1 Drain A 2 Drain B 3 .
The RF5L08350CB4 is a 400 W, 50 V high-performance, internally matched LDMOS FET, designed for multiple applications over the frequency band 0.

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Features

* Order code Frequency VDD POUT Gain Efficiency RF5L08350CB4 860 MHz 50 V 400 W 19 dB 61%
* High efficiency and linear gain operations
* Integrated ESD protection
* Internally matched for ease of use
* Large positive and negative gate-source voltage range f

Applications

* Wideband lab amplifier from 0.4 to 1 GHz
* Digital UHF TV 470-860 MHz
* 650 MHz particle accelerator

RF5L08350CB4 Distributors

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