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RF3L05400CB4 RF Power LDMOS transistor

RF3L05400CB4 Description

RF3L05400CB4 Datasheet 400 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain.
The RF3L05400CB4 is a 400 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz.

RF3L05400CB4 Features

* Order code RF3L05400CB4 Frequency 108 MHz VDD 28 V POUT 400 W Gain 15 dB Efficiency 75%
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* In complian

RF3L05400CB4 Applications

* 2-30 MHz HF or short wave communication
* 30-88 MHz ground communication
* 118-140 MHz avionics
* 136-174 MHz commercial ground communication
* 30-512 MHz jammer, ground/air communication

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Power LDMOS transistor STMicroelectronics
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