RF3L05200CB4 RF power LDMOS transistor

STMicroelectronics

Description

RF3L05200CB4 Datasheet 200 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain.
The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz.

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Datasheet Specifications

Part number: RF3L05200CB4
Manufacturer: STMicroelectronics ↗
File Size: 1.66 MB
Datasheet: RF3L05200CB4-STMicroelectronics.pdf
Description: RF power LDMOS transistor

Features

* Order code RF3L05200CB4 Frequency 650 MHz VDD 28 V POUT 200 W Gain 19 dB Efficiency 63%
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* In complian

Applications

* 2-30 MHz HF or short wave communication
* 30-88 MHz ground communication
* 118-140 MHz Avionics
* 136-174 MHz commercial ground communication
* 30-512 MHz Jammer, ground/air communication

RF3L05200CB4 Distributors

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RF3L05200CB4 power LDMOS transistor STMicroelectronics

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