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RF3L05150CB4 RF power LDMOS transistor

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Description

RF3L05150CB4 Datasheet 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain.
The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz.

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Features

* Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 dB Efficiency 60 %
* High efficiency and linear gain operations
* Integrated ESD protection
* Large positive and negative gate-source voltage range for improved class C operation
* In complia

Applications

* 2-30 MHz HF or short wave communication
* 30-88 MHz ground communication
* 118-140 MHz Avionics
* 136-174 MHz commercial ground communication
* 30-512 MHz Jammer, ground/air communication

RF3L05150CB4 Distributors

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