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M28F512 - 512 Kbit (64Kb x8 Bulk Erase) Flasxh Memory

M28F512 Description

M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION * Standby Current: 100µA Max 10,000 ERASE/PROGR.
The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte.

M28F512 Applications

* where the memory has to be reprogrammed in the equipment. The access time of 90ns makes the device suitable for use in high speed microprocessor systems. Figure 1. Logic Diagram VCC VPP 16 A0-A15 8 DQ0-DQ7 Table 1. Signal Names A0 - A15 Address Inputs DQ0 - DQ7 Data In

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512 Kbit 64Kb Bulk Erase Flasxh Memory STMicroelectronics
STMicroelectronics M28F512-like datasheet