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M28F201 2 Mb FLASH MEMORY

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Description

M28F201 2 Mb (256K x 8, Chip Erase) FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs .
The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte.

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Applications

* where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in hi

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M28F201 FLASH MEMORY STMicroelectronics
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