M28F010 1024K (128K x 8) CMOS FLASH MEMORY

Intel Corporation

Description

M28F010 1024K (128K x 8) CMOS FLASH MEMORY Y Y Y Y Y Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical.
Symbol A0. A16 DQ0. DQ7 Type INPUT INPUT OUTPUT Name and Function ADDRESS INPUTS for memory addresses Addresses are internally latched.

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Datasheet Specifications

Part number: M28F010
Manufacturer: Intel Corporation
File Size: 317.31 KB
Datasheet: M28F010_IntelCorporation.pdf
Description: 1024K (128K x 8) CMOS FLASH MEMORY

Features

* g 10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing Y Y Y Y ETOX-III Flash-Memory Technology EPROM-Compatible Process Base High-Volume Manufacturing Experience Compatible with JEDEC-Standard Byte-Wide EPROM Pinouts 10 000 Program Erase Cycles Minimum Available in Three Product G

Applications

* where traditional EEPROM functionality (byte erasure) is either not required or is not cost-effective Use of the M28F010 is also appropriate where EPROM ultraviolet erasure is impractical or too time consuming 271111
* 1 Figure 1 M28F010 Block Diagram January 1996 Order Number 271111-005

M28F010 Distributors

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M28F010 1024K 128K CMOS FLASH MEMORY Intel Corporation

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