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G30M65DF2 - Trench gate field-stop IGBT

G30M65DF2 Description

STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data TAB TO-220 1 23 Figure 1:.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

G30M65DF2 Features

* 6 µs of minimum short-circuit withstand time
* VCE(sat) = 1.55 V (typ. ) @ IC = 30 A
* Tight parameters distribution
* Safer paralleling
* Low thermal resistance

G30M65DF2 Applications

* Motor control
* UPS

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Trench gate field-stop IGBT STMicroelectronics
STMicroelectronics G30M65DF2-like datasheet