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AM82731-050 - RF & MICROWAVE TRANSISTORS

AM82731-050 Description

AM82731-050 *...RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR.
The AM82731-050 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver applications.

AM82731-050 Applications

* REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED RUGGEDIZED VSWR 3:1 @ 1 dB OVERDRIVE LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 50 W MIN. WITH 6 dB GAIN .400 x .400 2LFL (S036) hermetically sealed ORDER CODE AM82731-050 BRANDING 82731-50

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MICROWAVE TRANSISTORS STMicroelectronics
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