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AM82731-025 - RF & MICROWAVE TRANSISTORS

AM82731-025 Description

AM82731-025 *....RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZA.
The AM82731-025 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.

AM82731-025 Applications

* LOW PARASITIC, DOUBLE LEVEL METAL DESIGN REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR @ 1 dB OVERDRIVE LOW RF THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 25 W MIN. WITH 6.2 dB GAIN .400 x .400 2LFL (S036) hermetically se

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MICROWAVE TRANSISTORS STMicroelectronics
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