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AM82731-003 - RF & MICROWAVE TRANSISTORS

AM82731-003 Description

AM82731-003 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *....REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAP.
The AM82731-003 device is a medium power silicon bipolar NPN transistor specifically designed for SBand radar pulsed driver applications.

AM82731-003 Applications

* . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT IMPEDANCE MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 3.0 W. MIN. WITH 5.7 dB GAIN BANDWIDTH = 400 MHz .400 x .400 2NLFL (S042) hermetically sealed OR

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MICROWAVE TRANSISTORS STMicroelectronics
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