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STW38NB20
N-CHANNEL 200V - 0.052 Ω - 38A TO-247 PowerMESH™ MOSFET
PRELIMINARY DATA
Table 1. General Features
Type
VDSS
RDS(on)
STW38NB20 200 V
< 0.065 Ω
ID 38 A
Figure 1. Package
FEATURES SUMMARY
■ TYPICAL RDS(on) = 0.052 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY ■ ± 30V GATE TO SOURCE VOLTAGE RATING
t(s) ■ 100% AVALANCHE TESTED c ■ LOW INTRINSIC CAPACITANCE u ■ GATE CHARGE MINIMIZED rod ■ REDUCED VOLTAGE SPREAD
TO-247
3 2 1
P DESCRIPTION te Using the latest high voltage MESH OVERLAY™ le process, STMicroelectronics has designed an ado vanced family of power MOSFETs with outstands ing performances.
STW38NB20 Datasheet
