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STB11NK40Z - N-CHANNEL PowerMESH MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 DataSheet.

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Datasheet Details

Part number STB11NK40Z
Manufacturer STMicroelectronics
File Size 601.37 KB
Description N-CHANNEL PowerMESH MOSFET
Datasheet download datasheet STB11NK40Z Datasheet
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www.DataSheet4U.com STP11NK40Z - STP11NK40ZFP STB11NK40Z N-CHANNEL 400V - 0.49Ω - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP11NK40Z STP11NK40ZFP STB11NK40Z s s s s s s VDSS 400 V 400 V 400 V RDS(on) < 0.55 Ω < 0.55 Ω < 0.55 Ω ID 9A 9A 9A Pw 110 W 30 W 110 W 3 1 2 TYPICAL RDS(on) = 0.49 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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