Datasheet Specifications
- Part number
- HFS4N60
- Manufacturer
- SEMIHOW
- File Size
- 767.59 KB
- Datasheet
- HFS4N60-SEMIHOW.pdf
- Description
- 600V N-Channel MOSFET
Description
HFS4N60 July 2005 HFS4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 Ω ID = 4.0 A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 2.0 Ω (Typ. ) @VGS=10V 100% Avalanche TesteHFS4N60 Distributors
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