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HFS4N60 600V N-Channel MOSFET

HFS4N60 Description

HFS4N60 July 2005 HFS4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 2.0 Ω ID = 4.0 A .

HFS4N60 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ. ) @VGS=10V  100% Avalanche Teste

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Datasheet Details

Part number
HFS4N60
Manufacturer
SEMIHOW
File Size
767.59 KB
Datasheet
HFS4N60-SEMIHOW.pdf
Description
600V N-Channel MOSFET

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600V N-Channel MOSFET SEMIHOW
SEMIHOW HFS4N60-like datasheet