Datasheet Specifications
- Part number
- HFS4N65
- Manufacturer
- SemiHow
- File Size
- 813.23 KB
- Datasheet
- HFS4N65-SemiHow.pdf
- Description
- N-Channel MOSFET
Description
HFS4N65 April 2006 HFS4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6 * A .
Features
* Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 2.3 Ω (Typ. ) @VGS=10V 100% Avalanche TesteHFS4N65 Distributors
📁 Related Datasheet
📌 All Tags