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HFS3N80 800V N-Channel MOSFET

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Description

HFS3N80 Dec 2005 BVDSS = 800 V HFS3N80 800V N-Channel MOSFET .

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Datasheet Specifications

Part number
HFS3N80
Manufacturer
SEMIHOW
File Size
667.13 KB
Datasheet
HFS3N80-SEMIHOW.pdf
Description
800V N-Channel MOSFET

Features

* ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 17 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 4.0 Ω (Typ. ) @VGS=10V 100% Avalanch

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