RU6H4R - N-Channel Advanced Power MOSFET

Datasheet Summary

Description

Applications High efficiency switch mode power supplies Lighting Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range

Features

600V/4A, RDS (ON) =1800mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
Fast Switching.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

Ruichips

📥 Download Datasheet

Datasheet Details

Part number	RU6H4R
Manufacturer	Ruichips
File Size	305.81 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU6H4R Datasheet
Additional preview pages of the RU6H4R datasheet.

📁 Similar Datasheet

RU602B - N-Channel 60V MOSFET (VBsemi)
RU6055 - Sensors (ifm)
RU6199 - N-Channel Advanced Power MOSFET (Ruichips Semiconductor)

Other Datasheets by Ruichips

RU6H10P - N-Channel Advanced Power MOSFET
RU6H10R - N-Channel Advanced Power MOSFET
RU6H11R - N-Channel Advanced Power MOSFET
RU6H1L - N-Channel Advanced Power MOSFET
RU6H2K - N-Channel Advanced Power MOSFET
RU6H2L - N-Channel Advanced Power MOSFET
RU6H2R - N-Channel Advanced Power MOSFET
RU6H5L - N-Channel Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text

RU6H4R N-Channel Advanced Power MOSFET Features • 600V/4A, RDS (ON) =1800mΩ(Typ.

Published: Apr 26, 2016 |