Description
GDS TO251
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain-S
Features
- 600V/2A,
RDS (ON) =4000mΩ(Typ. )@VGS=10V.
- Gate charge minimized.
- Low Crss( Typ. 5pF).
- Extremely high dv/dt capability.
- 100% avalanche tested.
- Lead Free and Green Devices Available (RoHS Compliant).
RU6H2K-Ruichips.pdf
