Description
TO-220
Applications
High efficiency switch mode power supplies
Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal
Features
- 600V/10A, RDS (ON) =0.75Ω (Typ. ) @ VGS=10V.
- Gate charge minimized.
- Low Crss( Typ. 12pF).
- Extremely high dv/dt capability.
- 100% avalanche tested.
- Lead Free and Green Available
RU6H11R
N-Channel Advanced Power MOSFET
MOSFET
Pin.
RU6H11R-Ruichips.pdf
