RU1HE3H - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number: RU1HE3H
Manufacturer: Ruichips
File Size: 275.86 KB
Datasheet: RU1HE3H-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

RU1HE3H Product details

Description

SOP-8 Applications Converters LED Backlight Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power D

Features

100V/3A, RDS (ON) =135mΩ (Typ. ) @ VGS=10V RDS (ON) =150mΩ (Typ. ) @ VGS=4.5V.
Super High Dense Cell Design.
Reliable and Rugged.
ESD Protected.
Lead Free and Green Available Pin.

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Published: Apr 10, 2017 |