RU1HE3D - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number: RU1HE3D
Manufacturer: Ruichips
File Size: 249.81 KB
Datasheet: RU1HE3D-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

RU1HE3D Product details

Description

SOT-223 Applications Power Management N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC=25°C ID Continuous Drain Current(VGS=10V) TC=25°C TC=70°C PD ② RθJA Maximum Power Dissipation

Features

100V/3A, RDS (ON) =130mΩ (Typ. ) @ VGS=10V RDS (ON) =140mΩ (Typ. ) @ VGS=4.5V.
ESD Protected.
Reliable and Rugged.
Ultra Low On-Resistance.
100% avalanche tested.
Lead Free and Green Available Pin.

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Published: Apr 10, 2017 |