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RU1HC2H N-Channel Advanced Power MOSFET

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Description

RU1HC2H Complementary Advanced Power MOSFET MOSFET .
SOP-8 Absolute Maximum Ratings Complementary MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage.

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Datasheet Specifications

Part number
RU1HC2H
Manufacturer
Ruichips
File Size
349.99 KB
Datasheet
RU1HC2H-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

Features

* N-Channel 100V/3.5A, RDS (ON) =75mΩ (Typ. ) @ VGS=10V RDS (ON) =80mΩ (Typ. ) @ VGS=4.5V
* P-Channel -100V/-2.5A, RDS (ON) =155mΩ (Typ. ) @ VGS=-10V RDS (ON) =175mΩ (Typ. ) @ VGS=-4.5V
* Reliable and Rugged
* ESD Protected
* Lead Free and Green Available Applicat

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