RU1H7H - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number: RU1H7H
Manufacturer: Ruichips
File Size: 262.79 KB
Datasheet: RU1H7H-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

RU1H7H Product details

Description

SOP-8 Applications SMPS Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=10V) TA=25°C TA=70°C Maximum Power Dissipation TA=25°C TA=70°C T

Features

100V/6A, RDS (ON) =40mΩ (Typ. ) @ VGS=10V.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Available RU1H7H N-Channel Advanced Power MOSFET MOSFET Pin.

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Published: Apr 10, 2017 |