RU1H35S - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number: RU1H35S
Manufacturer: Ruichips
File Size: 286.18 KB
Datasheet: RU1H35S-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

RU1H35S Product details

Description

TO-263 Applications Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case D

Features

100V/40A, RDS (ON) =21mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

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Published: Apr 10, 2017 |