RU1H35K - N-Channel Advanced Power MOSFET

Ruichips

RU1H35K Datasheet Preview — Preview of RU1H35K PDF

Datasheet Details

Part number	RU1H35K
Manufacturer	Ruichips
File Size	267.39 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H35K-Ruichips.pdf

RU1H35K Product details

Description

Applications High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case

Features

100V/40A, RDS (ON) =21mΩ(Typ. )@VGS=10V.
Super High Dense Cell Design.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant) Pin.

📁 RU1H35K Similar Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)

Other Datasheets by Ruichips

RU1H35L - N-Channel Advanced Power MOSFET
RU1H35Q - N-Channel Advanced Power MOSFET
RU1H35R - N-Channel Advanced Power MOSFET
RU1H35S - N-Channel Advanced Power MOSFET
RU1H300Q - N-Channel Advanced Power MOSFET
RU1H36L - N-Channel Advanced Power MOSFET

Published: Apr 25, 2016 |