RU1H35K N-Channel Advanced Power MOSFET

Ruichips

Description

RU1H35K N-Channel Advanced Power MOSFET .
Applications. High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwi.

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Datasheet Specifications

Part number: RU1H35K
Manufacturer: Ruichips
File Size: 267.39 KB
Datasheet: RU1H35K-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

Features

* 100V/40A, RDS (ON) =21mΩ(Typ. )@VGS=10V
* Super High Dense Cell Design
* 100% avalanche tested

Applications

* High Speed Power Switching GDS TO251 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Curr

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RU1H35K N-Channel Advanced Power MOSFET Ruichips

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