RU1H300Q - N-Channel Advanced Power MOSFET

Ruichips

RU1H300Q Datasheet Preview — Preview of RU1H300Q PDF

Datasheet Details

Part number	RU1H300Q
Manufacturer	Ruichips
File Size	276.92 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H300Q-Ruichips.pdf

RU1H300Q Product details

Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Drain-

Features

100V/300A, RDS (ON) =3mΩ(Typ. )@VGS=10V.
Ultra Low On-Resistance.
Exceptional dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 25, 2016 |