RU1H300Q N-Channel Advanced Power MOSFET

Ruichips

Description

RU1H300Q N-Channel Advanced Power MOSFET .
G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

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Datasheet Specifications

Part number: RU1H300Q
Manufacturer: Ruichips
File Size: 276.92 KB
Datasheet: RU1H300Q-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

Features

* 100V/300A, RDS (ON) =3mΩ(Typ. )@VGS=10V
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Devices Available (RoHS Com

Applications

* High Efficiency Synchronous Rectification in SMPS
* High Speed Power Switching

RU1H300Q Distributors

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RU1H300Q N-Channel Advanced Power MOSFET Ruichips

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