RU1H190S - N-Channel Advanced Power MOSFET

Ruichips

The RU1H190S by Ruichips is a N-Channel Advanced Power MOSFET. Below is the official datasheet preview.

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RU1H190S N-Channel Advanced Power MOSFET by Ruichips - Datasheet Preview — Official preview page of the **RU1H190S** N-Channel Advanced Power MOSFET datasheet (Ruichips).

Datasheet Details

Part number	RU1H190S
Manufacturer	Ruichips
File Size	405.41 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU1H190S-Ruichips.pdf
Additional preview pages of the RU1H190S datasheet.

RU1H190S Product details

Description

TO-220 TO-263 TO-220F TO-247 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings

Features

100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A.
Ultra Low On-Resistance.
Exceptional dv/dt capability.
Fast Switching and Fully Avalanche Rated.
100% avalanche tested.
175°C Operating Temperature.
Lead Free and Green Available.

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Published: Apr 25, 2016 |