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RFN10TF6S
Data Sheet
Super Fast Recovery Diode
RFN10TF6S
zSerise Standard Fast Recovery zDimensions(Unit : mm) zStructure
zApplications General rectification
zFeatures 1)Low switching loss 2)High current overload capacity
RFN10 TF6S
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zConstruction Silicon epitaxial planer type
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ROHM : TO220NFM ձ ղ Manufacture Year Manufacture Week
zAbsolue Maximum Ratings(Tc=25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average rectified foward current Forward current surge peak Junction temperature Storage temperature zElectrical Characteristics(Tj=25°C) Parameter Forward voltage Reverse current Reverse recovery time Thermal resistance Symbol VF IR trr Rth(j-c) Conditions IF=10A VR=600V IF=0.5A,IR=1A,Irr=0.25×IR Junction to case Min. Typ. 1.25 0.
RFN10TF6S Datasheet
