2SA1812 - High-voltage Switching Transistor

Datasheet Details

Part number	2SA1812
Manufacturer	ROHM
File Size	194.98 KB
Description	High-voltage Switching Transistor
Datasheet	2SA1812_Rohm.pdf

1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). 100mA / 10mA. Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SA1812 2SA1727 2SA1776 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 400 400.

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Published: Mar 22, 2005 |