2SA1813 - PNP Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SA1813
Manufacturer	Sanyo Semicon Device
File Size	81.32 KB
Description	PNP Epitaxial Planar Silicon Transistor
Datasheet	2SA1813_SanyoSemiconDevice.pdf

Very small-sized package permitting 2SA1813- applied sets to be made smaller and slimmer.
Adoption of FBET process.
High DC current gain (hFE=500 to 1200).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V).
High VEBO (VEBO≥15V). Package Dimensions unit:mm 2059A [2SA1813] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.

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Published: Mar 22, 2005 |